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BD540B - PNP Transistor

General Description

DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Complement to Type BD539B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and swi

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Part Number Description Manufacturer
BD540B PNP SILICON POWER TRANSISTORS Power Innovations Limited
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isc Silicon PNP Power Transistor BD540B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type BD539B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.