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BD912I - PNP Transistor

Description

DC Current Gain - : hFE = 40@ IC= -0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

switching applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 IB Base Current -5 PC Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.
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