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BDT63F - NPN Transistor

Description

Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 10A Complement to Type BDT62F/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier application

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63F 60 VCER Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 BDT63F 60 VCEO Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector
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