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INCHANGE

BDT63F Datasheet Preview

BDT63F Datasheet

NPN Transistor

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63F/A/B/C
DESCRIPTION
·Collector Current -IC= 10A
·High DC Current Gain-hFE= 1000(Min)@ IC= 10A
·Complement to Type BDT62F/A/B/C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63F
60
VCER
Collector-Emitter
Voltage
BDT63AF
80
BDT63BF
100
V
BDT63CF
120
BDT63F
60
VCEO
Collector-Emitter
Voltage
BDT63AF
80
BDT63BF
100
V
BDT63CF
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
0.25
A
90
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDT63F Datasheet Preview

BDT63F Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63F/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT63F
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT63AF
BDT63BF
IC= 30mA ;IB=0
BDT63CF
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
VECF
ICEO
ICBO
IEBO
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IF= 3A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TC= 150
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest= 1MHz
ton
Turn-On Time
toff
Turn-Off Time
IC= 3A; IB1= -IB2= 12mA;
VCC= 10V
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
2.5
V
2.5
V
2.0
V
0.5 mA
0.2
2.0
mA
5
mA
1000
3000
100
pF
1.0 2.5 μs
5.0 10 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDT63F
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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