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BDT64F - Silicon PNP Darlington Power Transistor

Description

Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applicat

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT64F -60 VCER Collector-Emitter Voltage BDT64AF -80 V BDT64BF -100 BDT64CF -120 BDT64F -60 VCEO Collector-Emitter Voltage BDT64AF -80 V BDT64BF -100 BDT64CF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature
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