Collector Current -IC= -12A
High DC Current Gain-hFE= 1000(Min)@ IC= -5A
Complement to Type BDT65/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general purpose
amplifier application
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT64
-60
VCER
Collector-Emitter Voltage
BDT64A BDT64B
-80 -100
BDT64C
-120
BDT64
-60
VCEO
Collector-Emitter Voltage
BDT64A BDT64B
-80 -100
BDT64C
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-12
ICM
Collector Current-Peak
-20
IB
Base Current-Continuous
-0.
BDT64 Datasheet
