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BDT64B - Silicon PNP Darlington Power Transistor

This page provides the datasheet information for the BDT64B, a member of the BDT64 Silicon PNP Darlington Power Transistor family.

Datasheet Summary

Description

Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier application

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Datasheet preview – BDT64B

Datasheet Details

Part number BDT64B
Manufacturer Inchange Semiconductor
File Size 201.92 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet BDT64B Datasheet
Additional preview pages of the BDT64B datasheet.

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.
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