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BDT64B Datasheet Silicon PNP Darlington Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·plement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.5 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1 ℃/W BDT64/A/B/C isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64A BDT64B IC= -30mA ;IB=0 -80 -100 V BDT64C -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A;

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