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BDT64C - Silicon PNP Darlington Power Transistor

Download the BDT64C datasheet PDF. This datasheet also covers the BDT64 variant, as both devices belong to the same silicon pnp darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier application

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Note: The manufacturer provides a single datasheet file (BDT64_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.