BDT64C Datasheet and Specifications PDF

·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT.

isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64A BDT64B IC= -30mA ;IB=0 .

SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages.

T64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symb.