Datasheet Details
| Part number | BDW21 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.78 KB |
| Description | NPN Transistor |
| Datasheet |
 BDW21 Datasheet
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| Part number | BDW21 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.78 KB |
| Description | NPN Transistor |
| Datasheet |
BDW21 Datasheet
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·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·Complement to Type BDW22 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 45 V 45 V 6 V 15 A 20 A 5 A 90 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW21 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW21.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDW21 | Bipolar NPN Device | Seme LAB |
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BDW21C | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BDW22 | PNP Transistor |
| BDW23 | NPN Transistor |
| BDW23A | NPN Transistor |
| BDW23B | NPN Transistor |
| BDW23C | NPN Transistor |
| BDW24 | PNP Transistor |
| BDW24A | PNP Transistor |
| BDW24B | PNP Transistor |
| BDW24C | PNP Transistor |
| BDW10 | NPN Transistor |