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BDW84C Datasheet Preview

BDW84C Datasheet

PNP Transistor

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isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW84C
DESCRIPTION
·Collector Current -IC= -15A
·High DC Current Gain-hFE= 750(Min)@ IC= -6A
·Complement to Type BDW83C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCER Collector-Emitter Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-0.5
A
3.5
W
150
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.83 /W
Rth j-a Thermal Resistance,Junction to Ambient 35.7 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDW84C Datasheet Preview

BDW84C Datasheet

PNP Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW84C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB=0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -12mA
-2.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -150mA
-4.0
V
VBE(on) Base-Emitter On Voltage
IC= -6A ; VCE= -3V
-2.5
V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -60V; IB= 0
VCB= -100V;IE= 0
VCB= -100V;IE= 0;TC= 150
VEB= -5V; IC=0
-1.0
mA
-0.5
-5.0
mA
-2.0
mA
hFE-1
DC Current Gain
IC= -6A ; VCE= -3V
750
20000
hFE-2
DC Current Gain
IC= -15A ; VCE= -3V
100
VF
Diode Forward Voltage
IF= 10A
4
V
Switching times
ton
Turn-on Time
toff
Turn-off Time
0.9
μs
IC= -10A; IB1= -IB2= -40mA;
RL= 3Ω; VBE(OFF)= 4.2V
7.0
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDW84C
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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BDW84C Datasheet PDF





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