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BDX34 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) High DC Current Gain : hFE= 750(Min) @IC= -4A Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -4A Complement to Type BDX33 Minimum Lot-to-Lot variations for robust device performance and reliable oper

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isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -4A ·Complement to Type BDX33 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.