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BDX34B - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) High DC Current Gain : hFE= 750(Min) @IC= -3A Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -3A Complement to Type BDX33B Minimum Lot-to-Lot variations for robust device performance and reliable ope

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isc Silicon PNP Darlington Power Transistor BDX34B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -3A ·Complement to Type BDX33B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.