Collector-Emitter Sustaining Voltage-
: VCEO(sus)= -80V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= -3A
Low Collector Saturation Voltage
: VCE(sat) = -2.0 V(Max) @ IC = -3.0 A
Complement to Type BDX53B
Minimum Lot-to-Lot variations for robust device
performance and reliab
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= -80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage
: VCE(sat) = -2.0 V(Max) @ IC = -3.0 A ·Complement to Type BDX53B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
ICP
Collector Current-Peak
-12
IB
Base Current-Continuous
-0.
BDX54B Datasheet
