BDX66 - PNP Transistor

Inchange Semiconductor

General Description

Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching appl

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Datasheet Details

Part number	BDX66
Manufacturer	Inchange Semiconductor
File Size	209.00 KB
Description	PNP Transistor
Datasheet	BDX66 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BDX66A	PNP Transistor
BDX66B	PNP Transistor
BDX66C	PNP Transistor
BDX60	NPN Transistor
BDX61	NPN Transistor

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX66 -80 VCBO Collector-Base Voltage BDX66A BDX66B -100 -120 BDX66C -140 BDX66 -60 VCEO Collector-Emitter Voltage BDX66A BDX66B -80 -100 BDX66C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.