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BDY61 Datasheet Preview

BDY61 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
·Low Collector-Emitter Saturation Voltage
·Excellent Safe Operating Area
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
IB
Base Current-Continuous
8
A
3
A
PC
Collector Power Dissipation @TC=25
50
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
BDY61
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDY61 Datasheet Preview

BDY61 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
BDY61
MIN TYP. MAX UNIT
60
V
5
V
2.0
V
1.5
V
100 μA
100 μA
40
300
20
30
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDY61
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BDY61 Datasheet PDF





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