Datasheet4U Logo Datasheet4U.com

BDY75 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power ,high current and

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BDY71 Silicon NPN Power Transistor Inchange Semiconductor
BDY71 Bipolar NPN Device Seme LAB
BDY71X Silicon NPN Power Transistor Inchange Semiconductor
BDY71X Bipolar NPN Device Seme LAB
BDY71X SILICON PLANAR EPITAXIAL NPN TRANSISTOR TT

Other Datasheets by Inchange Semiconductor

Part Number Description
BDY72 NPN Transistor
BDY73 NPN Transistor
BDY74 NPN Transistor
BDY76 NPN Transistor
BDY77 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power ,high current and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.
Published: |