Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V (Min)
- Low Collector-Emitter Saturation Voltage
- Excellent Safe Operating Area
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in high power ,high current and switching...