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BDY75 Datasheet Preview

BDY75 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V (Min)
·Low Collector-Emitter Saturation Voltage
·Excellent Safe Operating Area
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high power ,high current and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
7.5
A
150
W
200
Tstg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.8 /W
BDY75
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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BDY75 Datasheet Preview

BDY75 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BDY75
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
40
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A
3.0
V
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICBO
Collector Cutoff Current
IC= 15A ; VCE= 4V
VCE= 50V; VBE= -1.5V
VCE= 50V; VBE= -1.5V;TC=150
VCB= 50V; IE= 0
2.7
V
1.0
10
mA
1.0
mA
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
40
120
hFE-2
DC Current Gain
IC= 15A ; VCE= 4V
15
60
hFE-3
DC Current Gain
IC= 30A ; VCE= 4V
5
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 4V
3
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDY75
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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