Datasheet Details
| Part number | BDY77 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.90 KB |
| Description | NPN Transistor |
| Datasheet |
 BDY77 Datasheet
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| Part number | BDY77 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.90 KB |
| Description | NPN Transistor |
| Datasheet |
BDY77 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W BDY77 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY77 | Bipolar NPN Device | Semelab |
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