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BDY77 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·Low Collector-Emitter Saturation Voltage
·Excellent Safe Operating Area
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power audio, disk head positioners, linear
amplifiers, switching regulators,solenoid drivers,and DC-DC
converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation @TC=25150
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 /W
BDY77
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDY77 Datasheet Preview

BDY77 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 2V
ICEO
Collector Cutoff Current
VCE= 120V; IB= 0
ICEX
Collector Cutoff Current
VCE= 150V; VBE(off)= 1.5V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
hFE-2
DC Current Gain
IC= 16A ; VCE= 4V
BDY77
MIN MAX UNIT
120
V
1.0
V
2.5
V
2.0
V
0.5 mA
2.0 mA
0.2 mA
0.1 mA
40 120
10
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDY77
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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