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BDY95 Datasheet Preview

BDY95 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
3
A
PC
Collector Power Dissipation @TC=25
30
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.65 /W
BDY95
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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BDY95 Datasheet Preview

BDY95 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
BDY95
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-EmitterBreakdownVoltage IC= 50mA ; IB= 0
250
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A
3.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.4
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A; IB= 1.25A
VCB=400V; IE= 0,
VCB=400V; IE= 0,TC=125
VEB= 6V; IC=0
1.6
V
1.0
2.0
mA
0.1 mA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
15
60
COB
Output Capacitance
IE= 0;VCB= 10V;ftest= 1MHz
500 pF
fT
Current-Gain--Bandwidth Product
IC= 0.2A ; VCE= 10V ;ftest= 1MHz
4
MHz
Switching Times
ton
Turn-On Time
0.3 0.5 μs
tstg
Storage Time
IC= 2.5A; IB1= 0.5A;IB2= -1A;
VCC= 250V
2.0 3.5 μs
tf
Fall Time
0.3
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDY95
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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