Datasheet Details
| Part number | BDY95 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.40 KB |
| Description | NPN Transistor |
| Datasheet |
 BDY95 Datasheet
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| Part number | BDY95 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.40 KB |
| Description | NPN Transistor |
| Datasheet |
BDY95 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.65 ℃/W BDY95 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY95 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC= 50mA ;
isc Silicon NPN Power Transistors.
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| BDY97 | NPN Transistor |
| BDY98 | NPN Transistor |
| BDY99 | NPN Transistor |