Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in switching regulators applications.
BSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @ TC=90℃
Junction Temperature
℃
Tstg
Storage...
