BDY93 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) - High Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BDY93 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 198.78 KB |
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BDY93 | Seme LAB | Bipolar NPN Device |
| BDY90 | STMicroelectronics | HIGH CURRENT NPN SILICON TRANSISTOR |
| BDY97 | Seme LAB | Bipolar NPN Device |
| BDY98 | Seme | Bipolar NPN Device |
| BDY94 | Seme LAB | Bipolar NPN Device |