| Part number | BDY93 |
|---|---|
| Datasheet | BDY93-INCHANGE.pdf |
| File Size | 198.78 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY93 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY93 | Bipolar NPN Device | Seme LAB |
See all Inchange Semiconductor datasheets
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| BDY90 | NPN Transistor |
| BDY90A | NPN Transistor |
| BDY91 | NPN Transistor |
| BDY92 | NPN Transistor |
| BDY94 | NPN Transistor |
| BDY95 | NPN Transistor |
| BDY96 | NPN Transistor |
| BDY97 | NPN Transistor |
| BDY98 | NPN Transistor |
| BDY99 | NPN Transistor |
