Datasheet Details
| Part number | BDY96D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.21 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDY96D-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY96D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.21 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDY96D-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=90℃ TJ Junction Temperature 15 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.1 ℃/W BDY96D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY96 | Bipolar NPN Device | Seme |
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BDY96 | NPN Transistor | INCHANGE |
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