Datasheet Summary
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFG520/X
DESCRIPTION
- Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz
- High Gain
︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in low noise ,high-gain amplifiers and linear broadband...
