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BFG520-X Datasheet Preview

BFG520-X Datasheet

NPN Transistor

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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFG520/X
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz
·High Gain
S212 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
20
15
2.5
70
0.3
150
-65~150
UNIT
V
V
V
mA
W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BFG520-X Datasheet Preview

BFG520-X Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFG520/X
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
15
V
ICBO
Collector Cutoff Current
VCB= 8V; IE= 0
0.05 μA
hFE
DC Current Gain
IC=20mA ; VCE= 6V
60
250
fT
Current-Gain—Bandwidth Product
IC= 20mA ; VCE= 6V; f= 1MHz
9
GHz
Cre
Feedback Capacitance
IE= 0 ; VCB= 6V; f= 1MHz
0.3
pF
Ce
Emitter capacitance
IC=iC=0,VEB=0.5V,f=1MHz
1.0
pF
CC
Collector capacitance
IE=ie=0,VCB=6V,f=1MHz
0.6
pF
S212 Insertion Power Gain
IC= 40mA ; VCE= 8V; f= 900MHz
17
18
dB
NF
Noise Figure
IC= 5mA ; VCE= 6V; f= 900MHz
IC= 20mA ; VCE= 6V; f= 900MHz
1.1 1.6
1.6
2.1
dB
IC= 5mA ; VCE= 8V; f= 2GHz
1.9
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BFG520-X
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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