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BFG540 Datasheet Preview

BFG540 Datasheet

SOT-343R NPN Transistor

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isc Silicon NPN RF Transistor
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP.
@VCE = 8 V, IC = 10 mA, f = 900 MHz
·High Gain
S212 =16dB TYP.
@VCE= 8 V,IC = 40 mA,f = 900 MHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers
and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
BFG540
VALUE
20
12
2.5
120
0.5
150
-65~150
UNIT
V
V
V
mA
W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BFG540 Datasheet Preview

BFG540 Datasheet

SOT-343R NPN Transistor

No Preview Available !

isc Silicon NPN RF Transistor
BFG540
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
ICBO
Collector Cutoff Current
VCB= 8V; IE= 0
0.05 μA
hFE
DC Current Gain
IC=40mA ; VCE= 8V
60
250
fT
Current-Gain—Bandwidth Product
IC= 40mA ; VCE= 8V; f= 1MHz
9
GHz
Cre
Feedback Capacitance
IE= 0 ; VCB= 8V; f= 1MHz
0.5
pF
Ce
Emitter capacitance
IC=iC=0,VEB=0.5V,f=1MHz
2.0
pF
CC
Collector capacitance
IE=ie=0,VCB=8V,f=1MHz
0.9
pF
S212 Insertion Power Gain
IC= 40mA ; VCE= 8V; f= 900MHz
15
16
dB
NF
Noise Figure
IC= 10mA ; VCE= 8V; f= 900MHz
IC= 40mA ; VCE= 8V; f= 900MHz
1.3 1.8
1.9
2.4
dB
IC= 10mA ; VCE= 8V; f= 2GHz
2.1
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BFG540
Description SOT-343R NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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