| Part Number | BFG540 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
TTrraannssiissttoorrss
NPN 9GHz Wideband Transistor BFG540
■ Features
● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures
excellent reliability.
.
* High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. SOT-143 2.90±0.1 1.30±0.1 Unit:mm X 0~0.1 1.90 (Typ) 4 0.48 (max) 0.38 (min) 3 2.30±0.2 1.00±0.1 0.1(max) 0.55 (max) 0.45 (min) 0.15 (max) 0.09 (min) 1 0.88 (max) 0.78 (min) . |
BFG540 Datasheet and Specifications PDF
The BFG540 is a NPN 9GHz Wideband Transistor.
| Part Number | BFG540 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | EVVO |
| Overview | The BFG540 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. Marking: N37 PIN CONNECTIONS 1. collector 2.base 3&4.emitter SOT143 Absolute Maximum Ratings (Ta = 25 OC) Co. z NF=1.8dB TYP. @ f=0.9GHz, VCE=10V, IC=10mA z High Gain S21e 2 =13dB TYP. @ f=0.9GHz, VCE=8V, IC =40mA Description: The BFG540 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. Marking: N37 PIN CONNECTIONS 1. collector 2.base 3&4.emitter SOT143 Absolute Maximum Rating. |
| Part Number | BFG540 Datasheet |
|---|---|
| Description | NPN 9GHz wideband transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detecto.
* High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT. |
| Part Number | BFG540 Datasheet |
|---|---|
| Description | SOT-343R NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and re.
llector Cutoff Current
VCB= 8V; IE= 0
0.05 μA
hFE
DC Current Gain
IC=40mA ; VCE= 8V
60
250
fT
Current-Gain *Bandwidth Product IC= 40mA ; VCE= 8V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.5 pF Ce Emitter capacitance IC=iC=0,VEB=0.5V,f=1MHz 2.0 pF CC Col. |