BFG540XR Datasheet | Philips Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors NPN 9 GHz wideband transistor Features - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages. PINNING PIN DESCRIPTION BFG540 (Fig.1) Code: N37 1 collector 2 base 3 emitter 4 emitter BFG540/X (Fig.1) Code: N43 1 collector 2 emitter 3 base 4 emitter BFG540/XR (Fig.2) Code: N49 1 collector 2 emitter 3 base 4 emitter Product specification BFG540; BFG540/X; BFG540/XR handbook, 2 c4olumns Top view MSB014 Fig.1 SOT143B. handbook, 2 co3lumns Top view MSB035 Fig.2 SOT143R. September 1995 Philips Semiconductors NPN 9 GHz wideband transistor Product specification BFG540; BFG540/X;...