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BFS520 - NPN Transistor

General Description

Low Noise and High Gain NF = 1.5 dB TYP @VCE = 6V, IC = 5 mA, f = 1.0 GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amp

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isc Silicon NPN RF Transistor INCHANGE Semiconductor BFS520 DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP @VCE = 6V, IC = 5 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 150 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.