Excellent Safe Operating Area
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150 V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for hor
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isc Silicon NPN Power Transistor
BU109
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output stage of TVs and
CRTs applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage- VBE= -1.
BU109 Datasheet
