High Voltage
High Speed Switching
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Base Voltage VBE= 0
1500
V
VCEO Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7.
BU1508DF Datasheet
