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BU207 - NPN Transistor

General Description

High Voltage-VCEX= 1300V(Min.) Collector Current- IC = 5.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits .

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isc Silicon NPN Power Transistor BU207 DESCRIPTION ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2.5 A 55 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.