BU207 - Silicon NPN Transistor

Toshiba

Key Features

. High Voltage : VCES =1300V . High Speed : tf=0.7>us (Typ. ) . Glass Passivated Collector-Base Juncti on.

BU207 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	BU207
Manufacturer	Toshiba
File Size	40.08 KB
Description	Silicon NPN Transistor
Datasheet	BU207 Datasheet

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Other Datasheets by Toshiba

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BU204	Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED MESA TYPE BU207 TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES . High Voltage : VCES =1300V . High Speed : tf=0.7>us (Typ.) . Glass Passivated Collector-Base Juncti on. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage (Vrf.=0V) V CES Collector-Emitter Voltage (Rbe=100Q) VCER Transient Collector-Emitter VCE Voltage (Flash-over) [Flash-over) Collector-Emitter Voltage (Open Base) VCEO Collector Current Transient Collector Current (Flash-over) Base Current (Peak) DC ic Peak I CM ic [Flash-over) IBM Reverse Base DC Current Peak Collector Power Dissipation (Tc^95°C) -IB -IBM PC RATING 1300 1300 1500 600 5 7.5 10 4 100 2.5 12.5 UNIT V Z*25.0MAX. X 2<2L0MAX. x" h ^3 00 CO tfi ! J .