Datasheet Details
| Part number | BU207 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.05 KB |
| Description | NPN Transistor |
| Datasheet | BU207-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BU207.
| Part number | BU207 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.05 KB |
| Description | NPN Transistor |
| Datasheet | BU207-INCHANGE.pdf |
|
|
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·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2.5 A 55 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.64 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU207 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU207 | Silicon NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| BU204 | NPN Transistor |
| BU205 | NPN Transistor |
| BU208 | NPN Transistor |
| BU208A | NPN Transistor |
| BU208D | NPN Transistor |
| BU209 | Silicon NPN Power Transistor |
| BU209A | NPN Transistor |
| BU210 | NPN Transistor |
| BU211 | NPN Transistor |
| BU212 | NPN Transistor |