Click to expand full text
isc Silicon NPN Power Transistor
BU205
DESCRIPTION ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 2.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEX
Collector-Emitter Voltage
1300
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-Peak
3.0
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1.0
A
36
W
115
℃
Tstg
Storage Temperature
-65~115 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 2.