Datasheet4U Logo Datasheet4U.com

BU209 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BU209.

General Description

·High Reverse Voltage ·High Peak Power ·Collector Current- IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits in color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous 2.5 A IBM Base Current-Peak PC Collector Power Dissipation @TC≤95℃ TJ Junction Temperature 4 A 12.5 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.6 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU209 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CES Collector-Emitter Breakdown Voltage IC= 10mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ;

IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;

BU209 Distributor