BU209 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Reverse Voltage High Peak Power Collector Current- IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

receivers.

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BU209 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BU209
Manufacturer	Inchange Semiconductor
File Size	205.66 KB
Description	Silicon NPN Power Transistor
Datasheet	BU209 Datasheet

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isc Silicon NPN Power Transistor BU209 DESCRIPTION ·High Reverse Voltage ·High Peak Power ·Collector Current- IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous 2.5 A IBM Base Current-Peak PC Collector Power Dissipation @TC≤95℃ TJ Junction Temperature 4 A 12.