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BU209A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Voltage Capability ·High Peak Power ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits in color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous 2.5 A IBM Base Current-Peak PC Collector Power Dissipation @TC≤95℃ TJ Junction Temperature 4 A 12.5 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.6 ℃/W BU209A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU209A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CES Collector-Emitter Breakdown Voltage IC= 10mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ;

IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;

BU209A Distributor