High Voltage Capability
High Peak Power
High Current Capability
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage Capability ·High Peak Power ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits in color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
7.5
A
IB
Base Current-Continuous
2.5
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC≤95℃
TJ
Junction Temperature
4
A
12.
BU209A Datasheet
