BU207 Datasheet and Specifications PDF

The BU207 is a Silicon NPN Transistor.

Key Specifications

Mount TypeBushing
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Part NumberBU207 Datasheet
ManufacturerToshiba
Overview SILICON NPN TRIPLE DIFFUSED MESA TYPE BU207 TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES . High Voltage : VCES =1300V . High Speed : tf=0.7>us (Typ.) . Glass Passivated Collector-Base Ju. . High Voltage : VCES =1300V . High Speed : tf=0.7>us (Typ.) . Glass Passivated Collector-Base Juncti on. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage (Vrf.=0V) V CES Collector-Emitter Voltage (Rbe=100Q) VCER Transient Collector-Emitter VCE Voltage (Flash-over) .
Part NumberBU207 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color d. IONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE= 1300V; VBE= 0 1.0 mA IEB.

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