BU208A - SILICON NPN Transistor

Product Overview

Toshiba

Part number	BU208A
Manufacturer	Toshiba
File Size	112.21 KB
Description	SILICON NPN Transistor
Datasheet	BU208A Datasheet
Additional preview pages of the BU208A datasheet.

. High Voltage : V CES =1500V . Low Saturation Voltage : VcE(sat)=lV (Max. ).
Fall Time : tf=0.7,us (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 02 5.OMAX, #2 1.0 MAX, tr m dxr + 0.09 0i. o -a 03 30.2x0.2.

📁 Similar Datasheet

BU208D - NPN Transistor (INCHANGE)
BU2006 - (BU2006 - BU2010) Enhanced PowerBridge Rectifiers (Vishay Siliconix)
BU2006-E3 - Bridge Rectifiers (Vishay)
BU2008 - (BU2006 - BU2010) Enhanced PowerBridge Rectifiers (Vishay Siliconix)
BU2008-E3 - Bridge Rectifiers (Vishay)
BU2010 - (BU2006 - BU2010) Enhanced PowerBridge Rectifiers (Vishay Siliconix)
BU2010-E3 - Bridge Rectifiers (Vishay)
BU202DL - Bipolar Junction Transistor (Jingdao)

Other Datasheets by Toshiba

Published: Aug 12, 2024 |