BU208A
BU208A is SILICON NPN Transistor manufactured by Toshiba.
FEATURES
. High Voltage
: V CES =1500V
. Low Saturation Voltage : Vc E(sat)=l V (Max.)
- Fall Time
: tf=0.7,us (Typ.)
. Glass Passivated Collector-Base Junction
Unit in mm
02 5.OMAX,
#2 1.0 MAX, tr m dxr + 0.09 0i.o -a 03
30.2x0.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current (Peak) Total Power Dissipation
(Tc^95°C) Junction Temperature
Storage Temperature Range
Thermal Resistance
SYMBOL VCES Vebo ic ICM IBM p tot T
Tstg R th(j-c)
RATING 1500
5 5
12.5 +115
-65-+115
UNIT V V A A A
°c °c °c/w
1. BASE 2. EMITTER
COLLECTOR i^CASE)
TO-
TC- 3, TB-
TOSHIBA
2-21B1A...
