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BU323P Datasheet Preview

BU323P Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.)
·High Reliability
·Low Collector Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
16
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
3
A
125
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0 /W
BU323P
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU323P Datasheet Preview

BU323P Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 300mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6 A; IB= 120mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10 A; IB= 300mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 6V
ICBO
Collector Cutoff Current
VCB= RatedVCBO; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 6V
hFE-2
DC Current Gain
IC= 6A; VCE= 6V
hFE-3
DC Current Gain
IC= 10A; VCE= 6V
VECF
C-E Diode Forward Voltage
IF= 10A
COB
Output Capacitance
IE= 0; VCB= 10V; f= 100kHz
Switching Times
ts
Storage Time
tf
Fall Time
VCC= 12V; IC= 6A,
IB1= -IB2= 0.3A
BU323P
MIN TYP MAX UNIT
350
V
1.5
V
1.7
V
2.7
V
2.2
V
3.0
V
2.5
V
1.0 mA
40
mA
300
150
2000
50
3.5
V
165
pF
15
μs
15
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU323P
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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BU323P Datasheet PDF





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