High Voltage
High Switching Speed
Built-in Integrated Efficiency Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in horizontal deflection circuits of color TV
receivers and in line-operated switch-mode a
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isc Silicon NPN Power Transistor
BU506DF
DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in Integrated Efficiency Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV
receivers and in line-operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage-VBE=0
1350
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
20
W
150
℃
Tstg
Storage Temperature Range
-65~150
BU506DF Datasheet
