High Voltage
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in horizontal deflection circuits of color TV
receivers and in line-operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(Ta=2
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV
receivers and in line-operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage-VBE=0
1350
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
20
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
BU506F Datasheet
