Datasheet4U Logo Datasheet4U.com

BU508DFI - NPN Transistor

General Description

High Voltage-VCES= 1500V(Min.) Collector Current- IC = 8.0A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits .

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ST Microelectronics
BU508DFI SILICON POWER TRANSISTOR SavantIC
BU508DF Silicon Diffused Power Transistor NXP
BU508DF SILICON DIFFUSED POWER TRANSISTORS Comset
BU508DF NPN POWER TRANSISTORS CDIL

Other Datasheets by Inchange Semiconductor

Part Number Description
BU508DR NPN Transistor
BU508DW NPN Transistor
BU508DX NPN Transistor
BU508 NPN Transistor
BU508A NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 8.0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.