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isc Silicon Darlington NPN Power Transistor
BU522B
DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER(SUS) Collector-Emitter Voltage
425
V
VCER
Collector-Emitter Voltage
450
V
VCBO
Collector-Base Voltage
475
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
7
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
75
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.
BU522B Datasheet
