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BU526A Datasheet Preview

BU526A Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
BU526A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 460V(Min.)
·High Speed Switching
·High Power Dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
CER
Collector-Emitter Voltage
900
V
VCES
Collector-Emitter Voltage
900
V
VCEO
Collector-Emitter Voltage
460
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
86
W
175
Tstg
Storage Temperature Range
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
isc websitewww.iscsemi.com
MAX UNIT
1.75 /W
1 isc & iscsemi is registered trademark




INCHANGE

BU526A Datasheet Preview

BU526A Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BU526A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB=0
V(BR)CER Collector-Emitter Breakdown Voltage IC= 0.5mA; RBE100Ω
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 6A; IB= 1.25A
VCE=900V; VBE= 0;
VCE=900V; VBE= 0; TC= 150
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
MIN TYP. MAX UNIT
460
V
900
V
6
V
5.0
V
1.4
V
1.0
2.0
mA
15
45
6
10
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU526A
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BU526A Datasheet PDF





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