Part BU800
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 202.79 KB
Inchange Semiconductor
BU800

Overview

High Breakdown Voltage- : VCBO= 1500V (Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5.0A Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation.