BU800
BU800 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 5.0A
- Built-in Damper Diode
- Wide area of safe operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Collector Current- Peak
Collector Power Dissipation @ TC= 25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150
℃
BU800 isc website：.iscsemi....
