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BU800 Datasheet Preview

BU800 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 5.0A
·Built-in Damper Diode
·Wide area of safe operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current- Peak
PC
Collector Power Dissipation
@ TC= 25
TJ
Junction Temperature
8
A
50
W
150
Tstg
Storage Temperature Range
-65~150
BU800
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU800 Datasheet Preview

BU800 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 1.0A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Base Cutoff Current
hFE -1
DC Current Gain
IC= 5.0A; IB= 1.0A
VCB=750V; IE= 0
VCB=1500V; IE= 0
IC= 0.1A; VCE= 5V
hFE -2
DC Current Gain
IC= 5A; VCE= 5V
VECF C-E Diode Forward Voltage
IF= 5A
BU800
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
50 uA
1
mA
6
30
2.25
2.5
V
Switching Times
tstg
Storage Time
tf
Fall Time
IC = 5A,IB1 = IB2= 1A
12 μs
0.7 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU800
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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