Part BU800
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 202.79 KB
Inchange Semiconductor

BU800 Overview

Description

High Breakdown Voltage- : VCBO= 1500V (Min) - Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5.0A - Built-in Damper Diode - Wide area of safe operation - Minimum Lot-to-Lot variations for robust device performance and reliable operation.