900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BU941ZP Datasheet Preview

BU941ZP Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Built In Clamping Zener
·High Operating Junction Temperature
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in automotive environment as
electronic ignition power actuators.
ABSOLUTE MAXIMUM RATINGS(TBaB=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
350
V
VB EBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current
1
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TB CB =25
T JB
B
Junction Temperature
5
A
155
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
RB th j-cB
Thermal Resistance, Junction to Case 0.97 /W
BU941ZP
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU941ZP Datasheet Preview

BU941ZP Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TB CB=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 30mA
VCE(sat)-1 Collector-Emitter Saturation Voltage ICB= 8A; IB B= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage ICB= 10A; IB= 0.25A
VCE(sat)-3 Collector-Emitter Saturation Voltage ICB= 12A; IB= 0.3A
VBE(sat)-1B Base-Emitter Saturation Voltage
ICB =
8A;
I = BB
B
0.1A
VBE(sat)-2B Base-Emitter Saturation Voltage
ICB =
10A;
I = BB
B
0.25A
VBE(sat)-3B Base-Emitter Saturation Voltage
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
ICB =
12A;
I = BB
B
0.3A
V = CE B
B
300V;
I = BB
B
0
V = CE B
B
300V;
I = BB
B
0;TB CB =125
V = EB B
B
5V;
I =0 CB
B
hB FE
DC Current Gain
I = CB
B
5A
;
V = CE B
B
10V
VECF
C-E Diode Forward Voltage
IF= 10A
BU941ZP
MIN TYP. MAX UNIT
350
V
1.8
V
1.8
V
2.0
V
2.2
V
2.5
V
2.7
V
0.1
0.5
mA
20 mA
300
2.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU941ZP
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BU941ZP Datasheet PDF





Similar Datasheet

1 BU941Z HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
ST Microelectronics
2 BU941Z NPN SILICON TRANSISTOR
Unisonic Technologies
3 BU941ZE3 NPN Epitaxial Planar Transistor
Cystech Electonics
4 BU941ZF3 NPN Epitaxial Planar Transistor
Cystech Electonics
5 BU941ZFP NPN Epitaxial Planar Transistor
Cystech Electonics
6 BU941ZLE3 NPN Epitaxial Planar Transistor
CYStech
7 BU941ZNF3 NPN Epitaxial Planar Transistor
CYStech
8 BU941ZP High voltage ignition coil driver NPN power Darlington transistors
ST Microelectronics
9 BU941ZP NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy