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BU941P Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (TBaB=25℃) SYMBOL PARAMETER VALUE UNIT V CBO B B Collector-Base Voltage 500 V V CEO B B Collector-Emitter Voltage 400 V V EBO B B Emitter-Base Voltage 5 V I CB B Collector Current- Continuous 15 A I CM B B Collector Current-Peak 30 A I BB B Base Current 1 A I BM B B Base Current-Peak P CB B Collector Power Dissipation @TB CB =25℃ T jB B Junction Temperature 5 A 155 W 150 ℃ T stg B B Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RB th j-cB Thermal Resistance, Junction to Case 0.97 ℃/W BU941P isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU941P ELECTRICAL CHARACTERISTICS TB CB=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VB CEO(SUS)B Collector-Emitter Voltage Sustaining IB CB =50mA;

I = BB B 0 VB CE(sat)-1B Collector-Emitter Voltage Saturation I = CB B 8 A;

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