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BU941ZL - NPN Transistor

General Description

Built In Clamping Zener High Operating Junction Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS (T =25 aB B ℃) SYMBOL PARAMETER VALUE UNIT VCEO Col

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS (T =25 aB B ℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VBEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @ TBCB=25℃ T JB B Junction Temperature 5 A 155 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RBth j-cB Thermal Resistance, Junction to Case 0.