Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Built In Clamping Zener
- High Operating Junction Temperature
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High ruggedness electric ignitions
ABSOLUTE
MAXIMUM
RATINGS
(T
=25 aB
℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
VBEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation @ TBCB=25℃
T JB
Junction Temperature
℃
Tstg...
