BU941ZL Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor T CB B =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 10mA VCE(sat)-1 Collector-Emitter Saturation Voltage ICB= 8A; IBB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage ICB= 10A; IB= 0.25A VCE(sat)-3 Collector-Emitter Saturation Voltage ICB= 12A;.
