Inchange Semiconductor BU941ZP
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.BU941ZP Specifications
- Package : TO-247
- Mount Type : Through Hole
- Polarity : NPN
- Current Rating : 15A
- Terminals : 3
- Collector Emitter Voltage : 350V
- Emitter Base Voltage : 5V
- Collector Emitter Saturation Voltage : 2V
- Max Power Dissipation : 155W
- Max Operating Temp : 175°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BU941ZP |
|---|---|
| Datasheet | BU941ZP Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Built In Clamping Zener●High Operating Junction Temperature
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in automotive environment as electronic ignition power actuators.ABSOLUTE MAXIMUM RATINGS
(TBaB=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VB EBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @ TB CB =25℃ T JB B Junction Temperature 5 A 155 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RB th j-cB Thermal Resistance, Junction to Case 0.97 ℃/W BU941ZP isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TB CB=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 30mA VCE(sat)-1...