Datasheet Details
| Part number | BU941ZP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.30 KB |
| Description | NPN Transistor |
| Datasheet | BU941ZP-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | BU941ZP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.30 KB |
| Description | NPN Transistor |
| Datasheet | BU941ZP-INCHANGE.pdf |
|
|
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·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators.
ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VB EBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @ TB CB =25℃ T JB B Junction Temperature 5 A 155 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RB th j-cB Thermal Resistance, Junction to Case 0.97 ℃/W BU941ZP isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TB CB=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 30mA VCE(sat)-1 Collector-Emitter Saturation Voltage ICB= 8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU941ZP | High voltage ignition coil driver NPN power Darlington transistors | ST Microelectronics |
 |
BU941ZP3 | NPN Transistor | CYStech |
|
BU941ZPFI | High voltage ignition coil driver NPN power Darlington transistors | ST Microelectronics |
 |
BU941ZPFI | SILICON POWER TRANSISTOR | SavantIC |
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BU941Z | HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON | ST Microelectronics |
| Part Number | Description |
|---|---|
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| BU941ZT | NPN Transistor |
| BU941P | NPN Transistor |
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