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BUW133 - NPN Transistor

Description

High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

inductive circuits.

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isc Silicon NPN Power Transistor BUW133 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
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