Datasheet Details
| Part number | BUW133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.41 KB |
| Description | NPN Transistor |
| Datasheet | BUW133-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUW133.
| Part number | BUW133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.41 KB |
| Description | NPN Transistor |
| Datasheet | BUW133-INCHANGE.pdf |
|
|
|
·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCES Collector- Emitter Voltage (VBE= 0) 850 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current 10 IBM Base Current-Peak 15 PC Collector Power Dissipation @TC=25℃ 135 Tj Junction Temperature 150 UNIT V V V A A A A W ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW133 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
| Part Number | Description |
|---|---|
| BUW133A | NPN Transistor |
| BUW133H | NPN Transistor |
| BUW13 | NPN Transistor |
| BUW131 | NPN Transistor |
| BUW131A | NPN Transistor |
| BUW131H | NPN Transistor |
| BUW132 | NPN Transistor |
| BUW132A | NPN Transistor |
| BUW132H | NPN Transistor |
| BUW13A | NPN Transistor |