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BUW133 Datasheet Preview

BUW133 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
BUW133
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
VCES
Collector- Emitter Voltage
(VBE= 0)
850
VCEO Collector-Emitter Voltage
450
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
20
IB
Base Current
10
IBM
Base Current-Peak
15
PC
Collector Power Dissipation
@TC=25
135
Tj
Junction Temperature
150
UNIT
V
V
V
A
A
A
A
W
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.93 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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BUW133 Datasheet Preview

BUW133 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUW133
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.7A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.3A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector-Base Cutoff Current
IEBO
Emitter Cutoff Current
IC= 10A; IB= 1.3A
VCB=VCBO; IE= 0
VCB=VCBO; IE= 0;TJ=100
VEB= 6V; IC= 0
hFE
DC Current Gain
COB
Output Capacitance
Switching Times , Resistive Load
IC= 15A ; VCE= 5V
IE= 0 ; VCB= 10V; ftest= 1kHz
ton
Turn-On Time
tstg
Storage Time
IC= 10A ;IB1= 1A;IB2= -2A
tf
Fall Time
MIN TYP. MAX UNIT
450
V
2.5
V
3.0
V
1.5
V
0.25
1.5
mA
1
mA
5
400 pF
0.4
μs
1.3
μs
0.15
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUW133
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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