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isc Silicon NPN Power Transistor
BUW133H
DESCRIPTION
·
High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 430V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in very fast switching applications in
inductive circuits.
BUW133H Datasheet
