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BUX48A Datasheet Preview

BUX48A Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BUX48A
DESCRIPTION
·High Voltage Capability
·High Current Capability
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high-voltage,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ulary suited for line-operated swtchmode applications such
as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
5
A
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
20
A
175
W
200
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~200
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
isc websitewww.iscsemi.com
1.0 /W
1 isc & iscsemi is registered trademark




INCHANGE

BUX48A Datasheet Preview

BUX48A Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BUX48A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
IC= 8A; IB= 1.6A;TC= 100
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 8A; IB= 1.6A
IC= 8A; IB= 1.6A;TC= 100
VCB=1000V; IE= 0
VCB=100V; IE= 0;TC=125
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 8A ; VCE= 5V
MIN MAX UNIT
450
V
7
V
1.5
2.0
V
5.0
V
1.6
1.6
V
0.2
2
mA
0.1 mA
8
Switching Times
ton
Turn-On Time
tstg
Storage Time
IC= 8A; IB1=IB2= -1.6A;VCC= 150V
1.0 μs
3.0 μs
tf
Fall Time
0.8 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUX48A
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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